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Lakesemi Launches the Industry-First 1200V SiC Full Bridge and Rectifier Module
Hefei, China, October 1st, 2022
Lakesemi announced that it has developed a new generation silicon carbide full bridge with rectifier module—LSCT30PV120B9G.
This new module has a very low on-resistance. In addition, it also has the characteristics of low capacitance, high-speed switching, and high switching frequency, which is helpful to improve the rapid response of equipment and energy saving. Therefore, it has a wide range of applications, such as motor drives, switching mode power supply, and UPS.
LSCT30PV120B9G is superior in silicon carbide full bridge with rectifier module. Its VDSS index reached 1,200 Volts. The model has On State Resistance of 88 Milliohms and a Total Gate Charge of 347 Nanocoloumbs. Thermal engineers might get benefit from its ultra-low transient thermal impedance of 0.28 Degrees Celsius per Watt at 1ms for thermal shock.
Regarding the rectifier, its Repetitive Peak Reverse Voltage reaches 1,800 Volts, the Maximum RMS Forward Current is 50 Ampere, and Surge Current (@tp as 10 Milliseconds) is 315 Ampere. The rectifier can maintain good stability in complex working environments.
This module's operating temperature range (Ta) is minus 40 to 125 Degrees Celsius, ensuring the use in industry and harsh thermal environments. Meantime, it uses advanced packaging technology, its size just 62.8 by 56.7 by 16.5 Millimetres, allowing it to be used where space is tight.
The LSCT30PV120B9G has officially gone on sale. More
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Lakesemi, a Hefei, China-based startup company, focuses on power semiconductors. Lakesemi is a pioneer of wide-bandgap semiconductor products, such as Ga N or Si C based MOSFET. It is also providing silicon-based shielded gate transistors, IGBTs, IGBT modules, IPM, et cetera.
About Lakesemi
Lakesemi, a Hefei, China-based startup company, focuses on power semiconductors. Lakesemi is a pioneer of wide-bandgap semiconductor products, such as Ga N or Si C based MOSFET. It is also providing silicon-based shielded gate transistors, IGBTs, IGBT modules, IPM, etc.
